| PART |
Description |
Maker |
| IC43R16160-7TG IC43R16160-6TG |
4M x 16 Bit x 4 Banks (256-MBIT) DDR SDRAM 4米16位4个银行（256兆）DDR SDRAM内存
|
Panasonic, Corp.
|
| HY5DU56822AF HY5DU56422AF-J HY5DU561622AF HY5DU564 |
32M X 8 DDR DRAM, 0.7 ns, PBGA60
DDR SDRAM - 256Mb
64Mx4|2.5V|8K|J/M/K/H/L|DDR SDRAM - 256M
16Mx16|2.5V|8K|J/M/K/H/L|DDR SDRAM - 256M
|
HYNIX SEMICONDUCTOR INC
|
| HYMD532M646A6-H HYMD532M646A6-J HYMD532M646A6-K HY |
DDR SDRAM - SO DIMM 256MB
32M X 64 DDR DRAM MODULE, 0.7 ns, ZMA200
Unbuffered DDR SO-DIMM
|
HYNIX SEMICONDUCTOR INC
|
| HY5DU56822BT-D43 HY5DU56822BT-D4_D43 HY5DU56422BT- |
DDR SDRAM - 256Mb
256M-P DDR SDRAM
IC,SDRAM,DDR,4X8MX8,CMOS,TSSOP,66PIN,PLASTIC
|
Hynix Semiconductor
http://
|
| ICS16859C ICSSSTV16859CG-T ICSSSTV16859CKLF |
SSTV SERIES, POSITIVE EDGE TRIGGERED D FLIP-FLOP, TRUE OUTPUT, CQCC56
DDR 13-Bit to 26-Bit Registered Buffer
|
Integrated Circuit Systems
|
| ASM4SSTVF16859-56QR ASM4SSTVF16859-56QT ASM4SSTVF1 |
2.3 V -2.7 V, DDR 13-bit to 26-bit registered buffer
|
Alliance Semiconductor
|
| UPD45D128442G5-C75-9LG UPD45D128164G5-C75-9LG UPD4 |
128M-bit(8M-word x 4-bit x 4-bank)DDR SDRAM
128M-bit(2M-word x 16-bit x 4-bank)DDR SDRAM
128M-bit(4M-word x 8-bit x 4-bank)DDR SDRAM
|
NEC
|
| A48P3616 |
8M X 16 Bit DDR DRAM
|
AMICC[AMIC Technology]
|
| CBTV4020 CBTV4020EE CBTV4020EG |
20-bit DDR SDRAM 2 : 1 MUX
|
NXP Semiconductors
|
| SLGSSTVF16859V-TR SLGSSTVF16859 SLGSSTVF16859H SLG |
DDR 13 to 26 Bit Registered Buffer
|
List of Unclassifed Manufacturers
ETC[ETC]
|
